vt5200, vft5200, vbt5200, vit5200 www.vishay.com vishay general semiconductor revision: 14-aug-13 1 document number: 89176 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 trench mos barrier schottky rectifier ultra low v f = 0.58 v at i f = 2.5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder dip 275 c max. 10 s, per jesd 22-b106 (for to-220ac, ito-220ac and to-262aa package) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ac, ito-220ac, to-263ab and to-262aa ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs max. ? ? ? ? ? ? ? ? ? primary characteristics i f(av) 5.0 a v rrm 200 v i fsm 80 a v f at i f = 5.0 a 0.65 v t j max. 150 c package to-220ac, ito-220ac, to-263ab, to-262aa diode variation single tmbs ? nc k k a nc a k pin 1 case pin 2 pin 1 pin 2 to-220ac to-263ab to-262aa ito-220ac vt5200 vft5200 vit5200 vbt5200 k heatsink a nc nc a k heatsink 1 2 1 2 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt5200 vft5200 vbt5200 vit5200 unit max. repetitive pe ak reverse voltage v rrm 200 v max. average forward rectified current (fig. 1) i f(av) 5.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 80 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh e as 30 mj peak repetitive reverse current ? at t p = 2 s, 1 khz, t j = 38 c 2 c i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage (ito-220ac only) ? from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 40 to + 150 c
vt5200, vft5200, vbt5200, vit5200 www.vishay.com vishay general semiconductor revision: 14-aug-13 2 document number: 89176 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves ? (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 200 (min.) - v instantaneous forward voltage i f = 2.5 a t a = 25 c v f (1) 0.81 - v i f = 5.0 a 1.10 1.60 i f = 2.5 a t a = 125 c 0.58 - i f = 5.0 a 0.65 0.73 reverse current v r = 180 v t a = 25 c i r (2) 1.7 - a t a = 125 c 1.8 - ma v r = 200 v t a = 25 c - 150 a t a = 125 c 2.5 10 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt5200 vft5200 vbt5200 vit5200 unit typical thermal resistance r ? jc 3.5 7.0 3.5 3.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ac vt5200-e3/4w 1.82 4w 50/tube tube ito-220ac vft5200-e3/4w 1.65 4w 50/tube tube to-263ab vbt5200-e3/4w 1.36 4w 50/tube tube to-263ab vbt5200-e3/8w 1.36 8w 800/reel tape and reel to-262aa vit5200-e3/4w 1.44 4w 50/tube tube ca s e temperature (c) average forward rectified current (a) 6 4 0 25 50 75 100 125 vft5200 mounted on s pecific heat s ink 3 2 1 5 0 150 v(b,i)t5200 re s i s tive or inductive load 0 0.4 1.2 2.0 4.8 06 average forward current (a) average power di ss pation (w) 0.8 1.6 2.4 5 4 3 2 1 2.8 3.6 4.4 3.2 4.0 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
vt5200, vft5200, vbt5200, vit5200 www.vishay.com vishay general semiconductor revision: 14-aug-13 3 document number: 89176 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance in s tantaneou s forward voltage (v) 0 0.2 0.4 0.8 1.2 1.6 100 10 0.1 0.6 1.0 in s tantaneou s forward current (a) 1 1.4 t a = 150 c t a = 125 c t a = 25 c t a = 100 c 20 30 40 50 60 70 80 90 100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (ma) 0.1 0.01 0.001 0.0001 10 1 t a = 150 c t a = 125 c t a = 25 c t a = 100 c 1000 0.1 1 10 100 rever s e voltage (v) 10 100 junction capacitance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 10 1 0.01 0.1 1 10 100 t - pulse duration (s) junction to ca s e transient thermal impedance (c/w) vft5200 v(b,i)t5200
vt5200, vft5200, vbt5200, vit5200 www.vishay.com vishay general semiconductor revision: 14-aug-13 4 document number: 89176 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pin 0.415 (10.54)max. 0.370 (9.40) 0.360 (9.14) 0.057 (1.45) 0.045 (1.14) case pin 2 pin 1 to-220ac ito-220ac pin 1 2 0.025 (0.64) 0.015 (0.38) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.076 (1.93) ref. 45 ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.671 (17.04) 0.651 (16.54) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 7 ref. 7 ref. 0.350 (8.89) 0.330 (8.38) 0.140 (3.56) dia. 0.125 (3.17) dia. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) to-262aa heatsink pin 2 pin 1 pin 3 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) 0.411 (10.45) max. 0.250 (6.35) min. 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) nc k a k to-263ab 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) min. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. nc a k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) min. mounting pad layout
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